MOSFET OptiMOS-T2 PWR TRANS 55V 100A
IPP100N06S3-03: MOSFET OptiMOS-T2 PWR TRANS 55V 100A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 55 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 100 A | ||
| Resistance Drain-Source RDS (on) : | 3.3 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current1) | ID | T C=25, VGS=10 V | 100 | A |
| T C=100 , VGS=10 V2) |
100 | |||
| Pulsed drain current2) | ID,pulse | TC=25 | 400 | |
| Avalanche energy, single pulse3) | EAS | ID=50 A | 690 | mJ |
| Drain gate voltage2) | VDG | 55 | V | |
| Gate source voltage4) | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25 | 300 | W |
| Operating and storage temperature | Tj, Tstg | -55 ... +175 | ||
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | IPP100N06S3-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 21620pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 480nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPP100N06S3 03 IPP100N06S303 |