MOSFET OptiMOS PWR TRANST 40V 80A
IPP80N04S2L-03: MOSFET OptiMOS PWR TRANST 40V 80A
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 80 A | ||
| Resistance Drain-Source RDS (on) : | 3.4 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260 peak reflow
• 175operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
|
Parameter |
Symbol |
Conditions |
Value |
Unit |
|
Continuous drain current1) |
I D |
T C=25 , VGS=10 V |
80 |
A |
|
T C=100 , VGS=10 V2) |
80 | |||
|
Pulsed drain current2) |
I D,pulse |
T C=25 |
320 | |
|
Avalanche energy, single pulse2) |
EAS |
I D=80A |
810 |
mJ |
|
Gate source voltage4) |
VGS |
±20 |
V | |
|
Power dissipation |
Ptot |
T C=25 |
300 |
W |
|
Operating and storage temperature |
T j, T stg |
-55 ... +175 |
| Technical/Catalog Information | IPP80N04S2L-03 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 80A |
| Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 80A, 10V |
| Input Capacitance (Ciss) @ Vds | 6000pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 213nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IPP80N04S2L 03 IPP80N04S2L03 |