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MFG:6760  Package Cooled:IOR  

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Part Number: IPS021L

 

MFG: 6760

Package Cooled: IOR

 

Description: The IPS021L is a fully protected three terminal SMART POWER MOSFET that features over-current, overtem...


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IPS021L General Description


The IPS021L is a fully protected three terminal SMART POWER MOSFET that features over-current, overtemperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 5A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.

IPS021L Maximum Ratings

Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47 V  
Vin Maximum Input voltage -0.3 7  
Iin, max Maximum IN current -10 +10 mA  
Isd cont. Diode max. continuous current (1)
(rth=125/W)
- 1.4 A  
Isd pulsed Diode max. pulsed current (1) - 10  
Pd Maximum power dissipation(1)
(rth=125/W)
- 1
W  
ESD1 Electrostatic discharge voltage (Human Body) - 4 kV C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 C=200pF, R=0Ω, L=10µH
T stor. Max. storage temperature -55 150  
Tj max. Max. junction temperature -40 +150  

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25 unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness..

IPS021L Features

• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection

IPS021L Connection Diagram

IPS021L  Connection Diagram

IPS021L datasheet

IPS021L
PDF/DataSheet Download

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