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MFG:6760 Package Cooled:IOR


Part Number: IPS021L
MFG: 6760
Package Cooled: IOR
Description: The IPS021L is a fully protected three terminal SMART POWER MOSFET that features over-current, overtem...
MFG:6760 Package Cooled:IOR


MFG: 6760
Package Cooled: IOR
Description: The IPS021L is a fully protected three terminal SMART POWER MOSFET that features over-current, overtem...
The IPS021L is a fully protected three terminal SMART POWER MOSFET that features over-current, overtemperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 5A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
| Symbol | Parameter | Min. | Max. | Units | Test Conditions |
| Vds | Maximum drain to source voltage | - | 47 | V | |
| Vin | Maximum Input voltage | -0.3 | 7 | ||
| Iin, max | Maximum IN current | -10 | +10 | mA | |
| Isd cont. | Diode max. continuous current (1) (rth=125/W) |
- | 1.4 | A | |
| Isd pulsed | Diode max. pulsed current (1) | - | 10 | ||
| Pd | Maximum power dissipation(1) (rth=125/W) |
- | 1 |
W | |
| ESD1 | Electrostatic discharge voltage (Human Body) | - | 4 | kV | C=100pF, R=1500Ω, |
| ESD2 | Electrostatic discharge voltage (Machine Model) | - | 0.5 | C=200pF, R=0Ω, L=10µH | |
| T stor. | Max. storage temperature | -55 | 150 | ||
| Tj max. | Max. junction temperature | -40 | +150 |
IPS021L
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