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IPW50R140CP

MOSFET COOL MOS PWR TRANS 550V 0.140 Ohms

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IPW50R140CP: MOSFET COOL MOS PWR TRANS 550V 0.140 Ohms

IPW50R140CP Data Sheet

floor Price/Ceiling Price

US $ 1.57~1.78 / Piece | Get Latest Price
Part Number:
IPW50R140CP
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.78
  • $1.72
  • $1.68
  • $1.57
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.14 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-247
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.14 Ohms


Features:

• Worldwide best R DS ,on in TO220
• Lowest figure of merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebookadapter & PDP and LCD TV
• PWM for ATX, Notebook adapter, PDP and LCD TV


Specifications

Maximum ratings, at T j=25 , unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
ID
TC=25
23
A
TC=100
15
Pulsed drain current2)
ID,pulse
TC=25
56
Avalanche energy, single pulse
EAS
ID=9.3 A, VDD=50 V
616
mJ
Avalanche energy, repetitive tAR2),3)
EAR
ID=9.3 A, VDD=50 V
0.93
Avalanche current, repetitive tAR2),3)
IAR
9.3
A
MOSFET dv /dt ruggedness
dv /dt
VDS=0...400 V
50
V/ns
Gate source voltage
VGS
static
±20
V
AC (f >1 Hz)
±30
Power dissipation
Ptot
T C=25
192
W
Operating and storage temperature
Tj, Tstg
-55 ... 150
Mounting torque
M3 and M3.5 screws
60
Ncm



Parameters:

Technical/Catalog InformationIPW50R140CP
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25° C23A
Rds On (Max) @ Id, Vgs140 mOhm @ 14A, 10V
Input Capacitance (Ciss) @ Vds 2540pF @ 100V
Power - Max192W
PackagingTube
Gate Charge (Qg) @ Vgs64nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IPW50R140CP
IPW50R140CP



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