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Part Number: IR21093(S)
Description: The IR21093(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low ...
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IR21093(S)
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DataSheet
General Description
IR21093(S) General Description
The IR21093(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable rugge-dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
IR21093(S) Maximum Ratings
|
Symbol |
Definition |
Min. |
Max. |
Units |
|
VB |
High side floating supply voltage |
-0.3 |
625 |
V |
|
VS |
High side floating supply offset voltage |
VB - 25 |
VB + 0.3 | |
|
VHO |
High side floating output voltage |
VS - 0.3 |
VB + 0.3 | |
|
VCC |
Low side fixed supply voltage |
-0.3 |
25 | |
|
VLO |
Low side output voltage |
-0.3 |
VCC + 0.3 | |
|
VIN |
Logic input voltage |
VSS - 0.3 |
VCC + 0.3 | |
|
dVs/dt |
Allowable offset supply voltage transient |
- |
50 |
V/ns |
|
PD |
Package power dissipation @ TA +25°C (8 lead PDIP) |
- |
1.0 |
W |
|
(8 lead SOIC) |
- |
0.625 | ||
|
RTHJA |
Thermal resistance, junction to ambient (8 lead PDIP) |
- |
125 |
°C/W |
|
(8 lead SOIC) |
- |
200 | ||
|
TJ |
Junction temperature |
- |
150 |
°C |
|
TS |
Storage temperature |
-50 |
150 | |
|
TL |
Lead temperature (soldering, 10 seconds) |
- |
300 |
IR21093(S) Features
• Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with IN input
• Logic and power ground +/- 5V offset
• Internal 540ns dead-time
• Lower di/dt gate driver for better noise immunity
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• High side output in phase with IN input
• Logic and power ground +/- 5V offset
• Internal 540ns dead-time
• Lower di/dt gate driver for better noise immunity
IR21093(S) Connection Diagram
IR21093(S)
PDF/DataSheet Download
- Datasheet: IR21093(S)
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