MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET N-CH 60V 84A D2PAK
| Technical/Catalog Information | IRF1010ESTRR |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 84A |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 3210pF @ 25V |
| Power - Max | 200W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 130nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF1010ESTRR IRF1010ESTRR |
IRF034
PDF/DataSheet Download
MOSFET N-CH 60V 84A D2PAK
MOSFET N-CH 60V 84A D2PAK
Advanced HEXFET® Power MOSFETs of the IRF1010ESPbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device desig...
Advanced HEXFET Power MOSFETs of the IRF1010ESfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...
Advanced HEXFET® Power MOSFETs of the IRF1010EPbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig...
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KIT EVAL FOR MAX13487E - MAX13487EEVKIT#
