Purchase IRF1010EZS, In-stock IRF1010EZS From SeekIC.
MFG:IR Package Cooled:D2-PAK D/C:09+
- Table of contents:
IRF1010EZS
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Suppliers
DataSheet
General Description
IRF1010EZS
PDF/DataSheet Download
- Datasheet: IRF1010EZS
- File Size: 292166 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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IRF1010EZPbF
Specifically designed for Automotive applications of the IRF1010EZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op...
IRF1010EZLPbF
Specifically designed for Automotive applications of the IRF1010EZLPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction o...
IRF1010ESTRR
MOSFET N-CH 60V 84A D2PAK
IRF1010ESTRLPBF
MOSFET N-CH 60V 84A D2PAK
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IRF1010ESTRL
MOSFET N-CH 60V 84A D2PAK
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IRF1010ESPbF
Advanced HEXFET® Power MOSFETs of the IRF1010ESPbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device desig...
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