MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET N-CH 55V 85A TO-262
| Technical/Catalog Information | IRF1010NLPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 85A |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 43A, 10V |
| Input Capacitance (Ciss) @ Vds | 3210pF @ 25V |
| Power - Max | 180W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Package / Case | TO-262-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF1010NLPBF IRF1010NLPBF |
IRF1010NLPBF
PDF/DataSheet Download
Advanced HEXFET Power MOSFETs of the IRF1010NLfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...
Power MOSFETs of the IRF1010Nfrom International Advanced HEXFET Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that H...
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