IRF1404Z

Features:

Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Silicon Limited)	190	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	130
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Package Limited)	75
IDM	Pulsed Drain Current	750
PD @TC = 25°C	Power Dissipation	220	W
	Linear Derating Factor	1.5	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	320	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	480
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF1404Z are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.


Parameters:

Technical/Catalog Information	IRF1404Z
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	3.7 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	4340pF @ 25V
Power - Max	220W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF1404Z IRF1404Z