Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 133 A
Features: Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to TjmaxApplication Electric Power Steering (EPS)
Anti-lock Braking System (ABS)
Wiper Control
Climate Control
Power Door Lead-FreeSpecifications
|
Parameter |
Max. |
Units |
|
ID @TC = 25 |
Continuous Drain Current, VGS @ 10V |
169 |
A |
|
ID @TC = 100 |
Continuous Drain Current, VGS @ 10V |
118 |
|
IDM |
Pulsed Drain Current |
680 |
|
PD @TC = 25 |
Power Dissipation |
330 |
W |
|
|
Linear Derating Factor |
2.2 |
W/ |
|
VGS |
Gate-to-Source Voltage |
± 20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
560 |
mJ |
|
IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
|
EAR |
Repetitive Avalanche Energy |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
|
TJ
TSTG |
Operating Junction
Storage Temperature Range |
-55 to + 175 |
|
|
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
Mounting Torque, 6-32 or M3 screw |
10 lbf`in (1.1N`m) |
|
DescriptionSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits of the IRF1405PbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRF1405PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 169A |
| Rds On (Max) @ Id, Vgs | 5.3 mOhm @ 101A, 10V |
| Input Capacitance (Ciss) @ Vds | 5480pF @ 25V |
| Power - Max | 330W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 260nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF1405PBF
IRF1405PBF
|
IRF1405PBF Data Sheet
