IRF1405Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 180nC @ 10V
Power - Max: 230W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds: 4780pF @ 25V


Features:

· Advanced Process Technology
· Ultra Low On-Resistance
· 175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
ID @ TC = 25°C	Continuous Drain Current	16	A
ID @ TC =100°C	Continuous Drain Current	9.0	A
ICM	Pulsed Collector Current	64	A
ILM	Clamped Inductive Load Current	64	A
IF @ TC = 100°C	Diode Continuous Forward Current	8.0	A
IFM	Diode Maximum Forward Current	60	V
VGE	Gate-to-Emitter Voltage	± 20	A
PD @ TC = 25	Maximum Power Dissipation	60	W
PD @ TC = 100	Maximum Power Dissipation	24	W
TJ	Operating Junction and	-55 to +150	W/
TSTG	Storage Temperature Range	-55 to +150

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF1405Z are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.