MFG:IR Package Cooled:SOP-8 D/C:09+
MFG: IR
Package Cooled: SOP-8
D/C: 09+
Description: These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced pro...
These N-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques
| Parameter | Max. | Units | |
| VDS | Drain- Source Voltage | 20 | V |
| ID @ TA = 25 | Continuous Drain Current, VGS @ 4.5V | 4.2 | A |
| ID @ TA= 70 | Continuous Drain Current, VGS @ 4.5V | 3.4 | |
| IDM | Pulsed Drain Current | 17 | |
| PD @TA = 25 | Power Dissipation | 2.5 | W |
| PD @TA = 70 | wer Dissipation | 1.6 | |
| Linear Derating Factor | 0.22 | mW/ | |
| VGS | Gate-to-Source Voltage | ± 12 | V |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 |
IRF034
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