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IRF223

Features: `4.0A and 5.0A, 150V and 200V`rDS(ON)= 0.8 and 1.2`SOA is Power Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Input Impedance`Majority Carrier Device`Related Literature-TB334 Guidelines for Soldering Surface Moun Components to PC Boards Specificatio...

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SeekIC No. : 004376405 Detail

IRF223: Features: `4.0A and 5.0A, 150V and 200V`rDS(ON)= 0.8 and 1.2`SOA is Power Dissipation Limited`Nanosecond Switching Speeds`Linear Transfer Characteristics`High Input Impedance`Majority Carrier Device...

IRF223 Data Sheet

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Part Number:
IRF223
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`4.0A and 5.0A, 150V and 200V
`rDS(ON)= 0.8 and 1.2
`SOA is Power Dissipation Limited
`Nanosecond Switching Speeds
`Linear Transfer Characteristics
`High Input Impedance
`Majority Carrier Device
`Related Literature
-TB334  Guidelines for Soldering Surface Moun Components to PC Boards


Specifications

    IRF220 IRF221 IRF222 IRF223 UNITS
Drain to Source Voltage (Note 1) VDS 200 150 200 150 V
Drain to Gate Voltage (RGS = 20k)(Note 1)
 VDGR 200 150 200 150 V
Continuous Drain Current ID 5.0 5.0 4.0 4.0 A
TC = 100
 ID 3.0 3.0 2.5 2.5 A
Pulsed Drain Current (Note 3) IDM 20 20 16 16 A
Gate to Source Voltage. VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 40 40 40 40 W
Linear Derating Factor   0.32

0.32

 0.32 0.32 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 85 85 85 85 mJ
Operating and Storage Temperature TJ , TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering            
Leads at 0.063in (1.6mm) from case for 10s TL 300 300 300 300
Package Body for 10s, see TB334 Tpkg 260 260 260 260



Description

These are N-Channel enhancement mode silicon gate power ?eld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs of the IRF223 are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRF223.




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