IRF2804LPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : TO-262
Continuous Drain Current : 280 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	270	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V (See Fig. 9)	190
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package Limited)	75
IDM	Pulsed Drain Current	1080
ID @ TC = 25	Maximum Power Dissipation	300	A
	Linear Derating Factor	2.0	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy (Thermally Limited)	540	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	1160
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF2804LPbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2804LPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF2804LPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	2 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	6450pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	TO-262
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF2804LPBF IRF2804LPBF