Position: Home  > All Categories> Integrated Circuits (ICs) > IRF2804S

IRF2804S

Features: ` Advanced Process Technology` Ultra Low On-Resistance` 175 Operating Temperature` Fast Switching` Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 280 A ID @ TC = 100 Continu...

product image

IRF2804S Picture
See larger image
SeekIC No. : 004376424 Detail

IRF2804S: Features: ` Advanced Process Technology` Ultra Low On-Resistance` 175 Operating Temperature` Fast Switching` Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units I...

IRF2804S Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF2804S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax


Specifications

  Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 280 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (See Fig. 9) 200
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 1080
ID @ TC = 25 Maximum Power Dissipation 330 A
  Linear Derating Factor 2.2 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 670 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value 1160
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)  



Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRF2804S are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Circuit Protection
A50QS75-4Y
F-17*77
Audio Products
HUC1002
WM-64CT
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Tapes, Adhesives
803
AC452-2
View more