Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 175 A
Features: ` Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to TjmaxApplication·Climate Control, ABS, Electronic Braking, Windshield Wipers
·Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Silicon Limited) |
175 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V (See Fig. 9) |
120 |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Package Limited) |
75 |
| IDM |
Pulsed Drain Current |
700 |
| PD @ TC = 25 |
Maximum Power Dissipation |
330 |
W |
| |
Linear Derating Factor |
2.2 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy |
450 |
mJ |
| EAS (6 sigma) |
Single Pulse Avalanche Energy Tested Value |
1220 |
| IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting Torque, 6-32 or M3 screw |
1.1(10) |
N•m (lbf•in) |
DescriptionSpecifically designed for Automotive applications of the IRF2805PbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2805PbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRF2805PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 104A, 10V |
| Input Capacitance (Ciss) @ Vds | 5110pF @ 25V |
| Power - Max | 330W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 230nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF2805PBF
IRF2805PBF
|
IRF2805PBF Data Sheet
