IRF2805SPBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 135 A
Resistance Drain-Source RDS (on) : 4.7 m Ohms


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax


Application

· Climate Control
· ABS
· Electronic Braking
· Windshield Wipers
· Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	135	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	96
IDM	Pulsed Drain Current	700
PD @TC = 25	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	380	mJ
EAS (6 sigma)	Single Pulse Avalanche Energy Tested Value	1220
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
dv/dt	Peak Diode Recovery dv/dt	2.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Storage Temperature Range	300 (1.6mm from case )

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Starting T_J = 25, L = 0.08mH R_G = 25, I_AS = 104A. (See Figure 12).
I_SD 104A, di/dt 240A/s, V_DD V_(BR)DSS, T_J 175
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population. 100% tested to this value in production.


Description

Specifically designed for Automotive applications of the IRF2805SPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance persilicon area. Additional features of this product are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2805SPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF2805SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	135A
Rds On (Max) @ Id, Vgs	4.7 mOhm @ 104A, 10V
Input Capacitance (Ciss) @ Vds	5110pF @ 25V
Power - Max	200W
Packaging	Tube
Gate Charge (Qg) @ Vgs	230nC @ 10V
Package / Case	D²Pak, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF2805SPBF IRF2805SPBF