Position: Home  > All Categories> Integrated Circuits (ICs) > IRF2807LPbF

IRF2807LPbF

MOSFET N-CH 75V 82A TO-262

product image

IRF2807LPbF Picture
See larger image
SeekIC No. : 004376429 Detail

IRF2807LPbF: MOSFET N-CH 75V 82A TO-262

IRF2807LPbF Data Sheet

floor Price/Ceiling Price

US $ .77~.77 / Piece | Get Latest Price
Part Number:
IRF2807LPbF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~300
  • Unit Price
  • $.77
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`Fully Avalanche Rated
`Lead-Free


Specifications
Parameter
Max.
Units
ID @ TC = 25
Continuous Drain Current VGS @ 10V
82
A
ID @ TC =100
Continuous Drain Current VGS @ 10V
58
IDM
Pulsed Drain Current
280
PD @ TC = 25
Max. Power Dissipation
230
W
Linear Derating actor
1.5
W/
VGS
Gate-to-Source Voltage
±20
V
IAR
Avalanche Current
43
A
EAR
Repetitive Avalanche Energy
23
mJ
TJ
Operating Junction
-55 to 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw

10lb`in (1.1N`m)



Description

Advanced HEXFET® Power MOSFETs of the IRF2807LPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRF2807LPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF2807LPbF) is available for lowprofile applications.




Parameters:

Technical/Catalog InformationIRF2807LPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C82A
Rds On (Max) @ Id, Vgs13 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds 3820pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs160nC @ 10V
Package / CaseTO-262
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF2807LPBF
IRF2807LPBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Undefined Category
VI-B63-IU
X27 589
Resistors
A101G
3006P-1-205LF
Switches
US32DMRJ
HBGQ22P-11ET
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Isolators
HCPL062N
HCPL316J
Prototyping Products
AVT4168
DE1
View more