Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Drain-Source Breakdown Voltage
: 75 V
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 89 A
Features: · Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V(Silicon Limited) |
89 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V(See Fig. 9) |
63 |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Package Limited) |
75 |
| IDM |
Pulsed Drain Current |
350 |
| PD @ TC = 25 |
Max. Power Dissipation |
170 |
W |
| |
Linear Derating Factor |
1.1 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy (Thermally Limited) |
160 |
mJ |
| EAS (Tested ) |
Single Pulse Avalanche Energy Tested Value |
200 |
| IAR |
Avalanche Current |
See Fig.12a,12b,15,16 |
A |
| EAR |
Repetitive Avalanche Energy |
mJ |
| TJ, TSTG |
Junction and Storage Temperature Range |
-55 to 175 |
|
| |
Soldering Temperature, for 10 seconds
|
300 (1.6mm from case ) |
|
| |
Mounting torque, 6-32 or M3 screw |
10 lbfin (1.1Nm) |
|
DescriptionSpecifically designed for Automotive applications of the IRF2807ZPbF,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2807ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRF2807ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 75A |
| Rds On (Max) @ Id, Vgs | 9.4 mOhm @ 53A, 10V |
| Input Capacitance (Ciss) @ Vds | 3270pF @ 25V |
| Power - Max | 170W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-220-3 (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF2807ZPBF
IRF2807ZPBF
|
IRF2807ZPBF Data Sheet
