IRF2903Z

Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 260 A ID @ TC = 100 Continuous D...

product image

IRF2903Z Picture
SeekIC No. : 004376431 Detail

IRF2903Z: Features: `Advanced Process Technology`Ultra Low On-Resistance`175 Operating Temperature`Fast Switching`Repetitive Avalanche Allowed up to TjmaxSpecifications Parameter Max. Units ID @ T...

floor Price/Ceiling Price

Part Number:
IRF2903Z
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperature
`Fast Switching
`Repetitive Avalanche Allowed up to Tjmax





Specifications

Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 260 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (Silicon Limited) 180
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 1020
ID @ TC = 25 Power Dissipation 290 A
Linear Derating Factor 2.0 W/
VGS Gate-to-Source Voltage ±20 V
EAS (Thermally limited Single Pulse Avalanche Energy 290 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value 820
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy mJ
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbfin (1.1Nm)





Description

Specifically designed for Automotive applications of the IRF2903Z, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2903Z combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.






Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cable Assemblies
Tapes, Adhesives
803
Connectors, Interconnects
Resistors
View more