IRF2903ZPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 2.4 mOhms


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	260	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V (Silicon Limited)	180
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package Limited)	75
IDM	Pulsed Drain Current 􀀀	1020
PD @TC = 25	Power Dissipation	290	W
	Linear Derating Factor	2.0	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	290	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	820
IAR	Avalanche Current􀀀	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ,TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10lbin(1.1Nm)

Description

Specifically designed for Automotive applications of the IRF2903ZPbF, this HEXFET^® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175  junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2903ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRF2903ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	2.4 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds	6320pF @ 25V
Power - Max	290W
Packaging	Tube
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF2903ZPBF IRF2903ZPBF