Transistor Polarity
: N-Channel
Maximum Operating Temperature
: + 175 C
Mounting Style
: SMD/SMT
Package / Case
: D2PAK
Packaging
: Tube
Drain-Source Breakdown Voltage
: 75 V
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 160 A
Configuration
: Single Quint Source
Resistance Drain-Source RDS (on)
: 3.8 m Ohms
Features: `Advanced Process Technology
`Ultra Low On-Resistance
`175 Operating Temperatur
`Fast Switching
`Repetitive Avalanche Allowed up to TjmaxSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC =25 |
Continuous Drain Current,VGS @ 10V(Silicon Limited) |
180 |
A |
| ID @ TC =100 |
Continuous Drain Current,VGS @ 10V(See Fig. 9) |
120 |
| ID @ TC =25 |
Continuous Drain Current,VGS @ 10V(Package Limited)
|
160 |
| IDM |
Pulsed Drain Current |
700 |
| ID @ TC =100 |
Power Dissipation |
300 |
W |
| |
Linear Derating Factor |
2.0 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy (Thermally Limited) |
160 |
mJ |
EAS (tested)
|
Single Pulse Avalanche Energy Tested Value |
410 |
| IAR |
Avalanche Current |
See Fig.12a,12b,15,16 |
|
| EAR |
Repetitive Avalanche Energy |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
| |
Mounting Torque, 6-32 or screw |
10 lbf.in (1.1 N.m) |
|
DescriptionSpecifically designed for high current, high reliabil- ity applications, this HEXFET® Power MOSFET of the IRF2907ZS-7PPbF utilizes the latest processing techniques and ad- vanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Additional features of this design are a 175!a junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of the IRF2907ZS-7PPbF combine to make this design an extremely efficient and reliable device for use in Server & Telecom OR'ing, Automotive and low voltage Motor Drive Applications.
Parameters: | Technical/Catalog Information | IRF2907ZS-7PPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 160A |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 110A, 10V |
| Input Capacitance (Ciss) @ Vds | 7580pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 260nC @ 10V |
| Package / Case | D²Pak, TO-263 (7 leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF2907ZS 7PPBF
IRF2907ZS7PPBF
|
IRF2907ZS-7PPBF Data Sheet
