IRF453

The IRF453 is the key to International Rectifier's advanced line of power MOSFET transistors. The features of IRF453 are: (1)low RDS(ON) at high voltage; (2)improved inductive ruggedness; (3)excellent high voltage stability; (4)fast switching times; (5)rugged polysilicon gate cell structure; (6)low input capacitance; (7)extended safe operating area.

The following is about the absolute maximum ratings of IRF453: (1)drain-source voltage: 500V; (2)drain-gate voltage: 500V; (3)gate-source voltage: ±20V; (4)continuous drain current TC=25: 13A; (5)continuous drain current TC=100: 8.0A; (6)drain current-pulse: 52A; (7)gate current-pulse: ±1.5A; (8)total device dissipation @ TC=25, PD: 150 W and derate 1.2 W/ above 25; (9)operating and storage junction temperature range: -55 to +150.

The electrical characteristics of the IRF453 are: (1)drain-source breakdown voltage: 500V min at VGS=0V; (2)gate thresholad voltage: 2.0V min and 4.0V max at VDS=VGS, ID=250A; (3)gate-source leakage forward: 100nA max at VGS=20V; (4)gate-source leakage reverse: -100nA max at VGS=-20V; (5)zero gate voltage: 250A max at VDS=max. rating, VGS=0V or 1000A max at VDS=max. ratingx0.8, VGS=0V, TC=125; (6)on-state drain-source current: 13A min; (7)static drain-source on-state resistance: 0.38 typ and 0.4 max at VGS=10V, ID=7.0A.