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MFG:200  Package Cooled:IOR  

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Part Number: IRF7103Q

 

MFG: 200

Package Cooled: IOR

 

Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Du...


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IRF7103Q General Description


Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

IRF7103Q Maximum Ratings

Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 4.5V 3.0 A
ID @ TC = 70 Continuous Drain Current, VGS @ 4.5V 2.5
IDM Pulsed Drain Current 25
PD @TC = 25 Power Dissipation 2.4 W
Linear Derating Factor 16 mW/
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 22 mJ
IAR Avalanche Current See Fig.16c, 16d, 19, 20 A
EAR Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 12 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 175

IRF7103Q Features

* Advanced Process Technology
* Dual N-Channel MOSFET
* Ultra Low On-Resistance
* 175 Operating Temperature
* Repetitive Avalanche Allowed up to Tjmax
   Automotive [Q101] Qualified

IRF7103Q Typical Application

* Anti-lock Braking Systems (ABS)
* Electronic Fuel Injection
* Power Doors, Windows & Seats

IRF7103Q Connection Diagram

IRF7103Q Connection Diagram

IRF7103Q datasheet

IRF7103Q
PDF/DataSheet Download

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