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MFG:International Rectifier (VA) Category:Discrete Semiconductor Products

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Category: Discrete Semiconductor Products

MFG: International Rectifier (VA)

Descriptions: MOSFET N-CH 50V 3A 8-SOIC

Price Break

1
10
100
250
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1000

Unit Price

1.05000
.61100
.41780
.37588
.35186
.33232

Extended Price

1.05
6.11
41.78
93.97
175.93
332.32

(All prices are in USD) Prices for reference only

MOSFET N-CH 50V 3A 8-SOIC

Technical/Catalog Information	IRF7103TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	130 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds	290pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	30nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7103TRPBF IRF7103TRPBF IRF7103PBFCT ND IRF7103PBFCTND IRF7103PBFCT

IRF034
PDF/DataSheet Download

IRF7103TR
MOSFET N-CH 50V 3A 8-SOIC
IRF7103QTRPBF
MOSFET N-CH 50V 3A 8-SOIC
IRF7103QTR
MOSFET N-CH 50V 3A 8-SOIC
IRF7103QPbF
Specifically designed for Automotive applications IRF7103QPbF, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive ...
IRF7103Q
Specifically designed for Automotive applications IRF7103Q, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qua...
IRF7103PBF
MOSFET N-CH 50V 3A 8-SOIC

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