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IRF7205

Features: ·Adavanced Process Technology·Ultra Low On-Resistance·P-Channel MOSFET·Surface Mount· Available in Tape & Reel·Dynamic dv/dt Rating·Fast SwitchingSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -4.6 A ID @ TA = 70°C Continuous...

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SeekIC No. : 004376692 Detail

IRF7205: Features: ·Adavanced Process Technology·Ultra Low On-Resistance·P-Channel MOSFET·Surface Mount· Available in Tape & Reel·Dynamic dv/dt Rating·Fast SwitchingSpecifications Parameter Max. ...

IRF7205 Data Sheet

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Part Number:
IRF7205
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Adavanced Process Technology
·Ultra Low On-Resistance
·P-Channel MOSFET
·Surface Mount
· Available in Tape & Reel
·Dynamic dv/dt Rating
·Fast Switching




Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -4.6 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V -3.7 A
IDM Pulsed Drain Current -15 A
PD @TC = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.022 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt -3.0 V/nS
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C





Description

Fourth Generation HEXFETs IRF7205 from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The SO-8 IRF7205 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.






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