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Part Number: IRF7316QPbF

 

 

 

 

Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Du...


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IRF7316QPbF General Description


Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

IRF7316QPbF Maximum Ratings

Characteristic Symbol Value Units
Drain-source voltage VDS ?20 V
Gate-source voltage VGS ±12 V
Continuous Drain Current TA=25 ID -4.9 A
TA=70 -3.9
Pulsed Drain Current IDM -30
Continuous Source Current (Diode Conduction) IS -2.5

Maximum Power Dissipation

TA=25 PD 0.58 W
TA=70 0.36
Single-pulse avalanche energy EAS 6.5 mJ
Avalanche current IAR -5 A
Repetitive Avalanche Energy
 EAR 0.20 mJ
Peak Diode Recovery dV/dt dV/dt -5.0 V/ns
Junction and Storage Temperature Range TJ, TSTG - 55 to +150

IRF7316QPbF Features

` Advanced Process Technology
` Ultra Low On-Resistance
` Dual P- Channel MOSFET
` Surface Mount
` Available in Tape & Reel
` 150 Operating Temperature
` Automotive [Q101] Qualified
` Lead-Free

IRF7316QPbF datasheet

IRF034
PDF/DataSheet Download

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