MFG:International Rectifier Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier
Descriptions: MOSFET N+P 30V 4.9A 8-SOIC
4000
.97083
3883.32
| Technical/Catalog Information | IRF7319TR |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 6.5A, 4.9A |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 5.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 650pF @ 25V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 33nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF7319TR IRF7319TR |
IRF034
PDF/DataSheet Download
The IRF7319PBF has the following features including generation V technology;ultra low on-resistance;dual N and P channel mosfet;surface mount;fully avalanche rated;lead-free. Both the IRF7319PBF and PT6715 series ISRs are non-pro- grammable versions of the...
Fifth Generation HEXFETs IRF7319 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
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