IRF7341QPBF

Maximum Operating Temperature :
Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Configuration : Dual
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 65 mOhms
Continuous Drain Current : 5.1 A


Application

·Anti-lock Braking Systems (ABS)
·Electronic Fuel Injection
·Air bag


Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	55	V
ID @ TA = 25	Continuous Drain Current,VGS@10V	5.1	A
ID@ TA = 70	Continuous Drain Current,VGS@10V	4.2
IDM	Pulsed Drain Current	42
PD @TA = 25	CMaximum Power Dissipation	2.4	W
PD @TA = 70	CMaximum Power Dissipation	1.7	W
	Linear Derating Factor	16	mW/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	140	mJ
IAR	Avalanche Current	5.1	A
EAR	Repetitive Avalanche Energy	See Fig. 14, 15, 16	mJ
TJ,TSTG	Junction and Storage Temperature Range	-55 to + 175

Description

Specifically designed for Automotive applications IRF7341QPbF, these HEXFET^®Power MOSFET'sin a Dual SO-8 package utiliz the last est processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automot ive qualified HEXFET Power MOSFET's are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for se in Automotive applications and a wide variety of other applications.

The 175 rating IRF7341QPbF for the SO-8 package provides improve thermal performance with increased safe operating area and d ual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can ramatically reduce board space and is also available in Tape&Reel.

Parameters:

Technical/Catalog Information	IRF7341QPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	5.1A
Rds On (Max) @ Id, Vgs	50 mOhm @ 5.1A, 10V
Input Capacitance (Ciss) @ Vds	780pF @ 25V
Power - Max	2.4W
Packaging	Tube
Gate Charge (Qg) @ Vgs	44nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7341QPBF IRF7341QPBF