IRF7343QPBF

Configuration :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Gate-Source Breakdown Voltage : 20 V
Package / Case : SOIC-8
Drain-Source Breakdown Voltage : 55 V
Transistor Polarity : N and P-Channel
Resistance Drain-Source RDS (on) : 65 mOhms
Continuous Drain Current : 4.7 A


Features:

`Advanced Process Technology
`Ultra Low On-Resistance
`Dual N and P Channel MOSFET
`Surface Mount
`Available in Tape & Reel
`150 Operating Temperature
`Automotive [Q101] Qualified
`Lead-Free


Specifications

	Parameter	Max.		Units
		N-Channel	P-Channel
VDS VGS	Drain-to-Source Voltage Gate-to-Source Voltage	55 ±20	-55 ±20	V
ID @ TA = 25 ID @ TA = 70 IDM	Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current	4.7 3.8 38	-3.4 -2.7 -2.7	A
PD @ TA = 25 PD @ TC = 70	Maximum Power Dissipation Maximum Power Dissipation	2.0 1.3		W
EAS IAR EAR	Single-pulse avalanche energy Avalanche current Repetitive avalanche energy	7.2 4.7 0.20	114 -3.4 0.20	mJ A mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	-5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to +150

Description

Specifically designed for Automotive applications, these HEXFET^® Power MOSFET's IRF7343QPBF in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

The efficient SO-8 package IRF7343QPBF provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.

Parameters:

Technical/Catalog Information	IRF7343QPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	4.7A, 3.4A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4.7A, 10V
Input Capacitance (Ciss) @ Vds	740pF @ 25V
Power - Max	2W
Packaging	Tube
Gate Charge (Qg) @ Vgs	36nC @ 10V
Package / Case	SO-8
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF7343QPBF IRF7343QPBF