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Part Number: IRF7343QPBF
Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Du...
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IRF7343QPBF
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DataSheet
General Description
IRF7343QPBF General Description
Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150 junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
IRF7343QPBF Maximum Ratings
| Parameter | Max. | Units | ||
| N-Channel | P-Channel | |||
| VDS VGS |
Drain-to-Source Voltage Gate-to-Source Voltage |
55 ±20 |
-55 ±20 |
V |
| ID @ TA = 25 ID @ TA = 70 IDM |
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current |
4.7 3.8 38 |
-3.4 -2.7 -2.7 |
A |
| PD @ TA = 25 PD @ TC = 70 |
Maximum Power Dissipation Maximum Power Dissipation |
2.0 1.3 |
W | |
| EAS IAR EAR |
Single-pulse avalanche energy Avalanche current Repetitive avalanche energy |
7.2 4.7 0.20 |
114 -3.4 0.20 |
mJ A mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | -5.0 | V/ns |
| TJ, TSTG |
Junction and Storage Temperature Range | -55 to +150 | ||
IRF7343QPBF Features
`Advanced Process Technology
`Ultra Low On-Resistance
`Dual N and P Channel MOSFET
`Surface Mount
`Available in Tape & Reel
`150 Operating Temperature
`Automotive [Q101] Qualified
`Lead-Free
`Ultra Low On-Resistance
`Dual N and P Channel MOSFET
`Surface Mount
`Available in Tape & Reel
`150 Operating Temperature
`Automotive [Q101] Qualified
`Lead-Free
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
- ·IRF1010EL
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
- 126916 KB
IRF7343QPBF Relative Products
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IRF7343IPbF
Fifth Generation HEXFETs IRF7343IPbFfrom lntemational Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area.Thisbenefit,combined with the fast switching speed andruggedized devie design that HEXFET PowerMOSFET...
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IRF7342TRPBF
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