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MFG:IR  Package Cooled:06+  D/C:SO-8  

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Part Number: IRF7350

 

MFG: IR

Package Cooled: 06+

D/C: SO-8

Description: These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize a...


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IRF7350 General Description


These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications.

The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

IRF7350 Maximum Ratings

  Parameter Max. Units
N-Channel P-Channel
VSD Drain-to-Source Voltage 100 -100 A
ID @ TA = 25 Continuous Drain Current, V GS @ 10V 2.1 -1.5
ID @ TA = 70 Continuous Drain Current, V GS @ 10V 1.7 -1.2
IDM Pulsed Drain Current 8.4 -6.0
PD @TA = 25 Power Dissipation 2.0 W
  Linear Derating Factor 0.016 W/
EAS Single Pulse Avalanche Energy 35 51 mJ
VGS Gate-to-Source Voltage ± 20 ± 20 V
dv/dt Peak Diode Recovery dv/dt 4.0 4.3 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7350 Features

* Ultra Low On-Resistance
* Dual N and P Channel MOSFET
* Surface Mount
* Available in Tape and Reel

IRF7350 Connection Diagram

IRF7350 Connection Diagram

IRF7350 datasheet

IRF7350
PDF/DataSheet Download

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Related Part Number

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