MFG:IR Package Cooled:SOP8 D/C:0105+
MFG: IR
Package Cooled: SOP8
D/C: 0105+
Description: The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board s...
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
| Parameter | Maximum | Units | |
| ID @ TA = 25 | Continuous Drain Current | 6.5 | A |
| ID @ TA = 70 | 5.2 | ||
| IDM | Pulsed Drain Current | 52 | |
| PD @TA = 25 | Power Dissipation | 2.0 | W |
| PD @TA = 25 | 1.3 | ||
| Linear Derating Factor | 16 | mW/ | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| dv/dt | Peak Diode Recovery dv/dt | -5.0 | V/ns |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to +150 | |
IRF7353D1
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MOSFET N/P-CH 100V 2.1A 8-SOIC
These dual N and P channel HEXFET® power MOSFETs IRF7350PbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized de...
These dual N and P channel HEXFET® power MOSFETs IRF7350 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devi...
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