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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 80 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 3.6 A | ||
| Resistance Drain-Source RDS (on) : | 73 m Ohms | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 | Packaging : | Tube |
| Parameter | Max. | Units | |
| VDS | Drain-to-Source Voltage | 80 | V |
| VGS | Gate-to-Source Voltage | ± 20 | |
| ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 3.6 | A |
| ID @ TA = 100 | Continuous Drain Current, VGS @ 10V | 2.9 | |
| IDM | Pulsed Drain Current | 29 | |
| PD @TA = 25 | Maximum Power Dissipation | 2.0 | W |
| dV/dt | Peak Diode Recovery | 2.3 | V/ns |
| Linear Derating Factor | 0.02 | mW/ | |
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to + 150 |
| Technical/Catalog Information | IRF7380PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25° C | 3.6A |
| Rds On (Max) @ Id, Vgs | 73 mOhm @ 2.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 25V |
| Power - Max | 2W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 23nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF7380PBF IRF7380PBF |