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MFG:FA  Package Cooled:TO-220  D/C:09+  

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Part Number: IRF740B

 

MFG: FA

Package Cooled: TO-220

D/C: 09+

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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IRF740B General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

IRF740B Maximum Ratings

Symbol Parameter IRF730B IRFS730B Units
VDSS Drain-Source Voltage 400 V
ID Drain Current - Continuous (TC = 25)
              - Continuous (TC = 100)		 10 10 * A
6.3 6.3 * A
IDM Drain Current - Pulsed 40 40 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy 450 mJ
IAR Avalanche Current 10 A
EAR Repetitive Avalanche Energy 13.4 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
PD Power Dissipation (TC = 25)
      - Derate above 25		 134 44 W
1.08 0.35 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300

IRF740B Features

• 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

IRF740B datasheet

IRF740B
PDF/DataSheet Download

  • Datasheet: IRF740B
  • File Size: 916283 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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