Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 900mV @ 250µA
Drain to Source Voltage (Vdss): 12V
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 38nC @ 4.5V
Packaging: Tube
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 11.5A
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V
Input Capacitance (Ciss) @ Vds: 3529pF @ 10V
Specifications
|
Parameter |
Max. |
Units |
|
VDS |
Drain- Source Voltage |
-20 |
V |
|
ID @ TA = 25°C |
Continuous Drain Current, VGS @ -10V |
-11.5 |
A |
|
ID @ TA= 70°C |
Continuous Drain Current, VGS @ -10V |
-9.2 |
|
IDM |
Pulsed Drain Current |
-46 |
|
PD @TA = 25°C |
Power Dissipation |
2.5 |
W
|
|
PD @TA = 70°C |
Power Dissipation |
1.6 |
|
|
Linear Derating Factor |
20 |
mW/°C |
|
VGSM |
Gate-to-Source Voltage |
±8 |
V |
|
TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
°C |
DescriptionThese P-Channel HEXFET® Power MOSFETs IRF7420 from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 IRF7420 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.
IRF7420 Data Sheet
