IRF7476

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 12V
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 15A
Gate Charge (Qg) @ Vgs: 40nC @ 4.5V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 4.5V
Input Capacitance (Ciss) @ Vds: 2550pF @ 6V


Application

*High Frequency 3.3V and 5V input Pointof-
Load Synchronous Buck Converters for
Netcom and Computing Applications.
* Power Management for Netcom,
Computing and Portable Applications.




Pinout






Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 12	V
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	15	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	12
IDM	Pulsed Drain Current	120
PD @TA = 25	Maximum Power Dissipation	2.5	W
PD @TA = 70	Maximum Power Dissipation	1.6	W
	Linear Derating Factor	0.02	W/
TJ TSTG	Junction and Storage Temperature Range	-55 to + 155

Parameters:

Technical/Catalog Information	IRF7476
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	8 mOhm @ 15A, 4.5V
Input Capacitance (Ciss) @ Vds	2550pF @ 6V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7476 IRF7476