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MFG:IR  Package Cooled:SOP-8  D/C:09+  

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Part Number: IRF7484

 

MFG: IR

Package Cooled: SOP-8

D/C: 09+

Description: Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSF...


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IRF7484 General Description


Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

IRF7484 Maximum Ratings

  Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V 14 A
ID @ TA = 70°C Continuous Drain Current, VGS @ -10V 11 A
IDM Pulsed Drain Current 110 A
PD @TA = 25°C Maximum Power Dissipation 2.5 W
  Linear Derating Factor 0.02 mW/°C
VGS Gate-to-Source Voltage ± 8 V
EAS Single Pulse Avalanche Energy 230 mJ
IAR Avalanche Current See Fig.16c, 16d, 19, 20 A
EAR Repetitive Avalanche Energy mJ
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C

IRF7484 datasheet

IRF7484
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