MFG:IR Package Cooled:MICRO8 D/C:0719+
MFG: IR
Package Cooled: MICRO8
D/C: 0719+
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
| Parameter |
Max |
Units | ||
|
N-Channel |
P-Channel |
|||
| VDS | Drain-Source Voltage |
30 |
-30 |
V |
| ID @ TA = 25°C | Continuous Drain Current, VGS |
2.7 |
-2.0 |
|
| ID @ TA = 70°C | Continuous Drain Current, VGS |
2.1 |
-1.6 |
A |
| IDM | Pulsed Drain Current |
21 |
-16 |
|
| PD @TA = 25°C | Maximum Power Dissipation |
1.25 |
W | |
| PD @TA = 70°C | Maximum Power Dissipation |
0.8 |
W | |
| Linear Derating Factor |
10 |
mW/°C | ||
| VGS | Gate-to-Source Voltage |
± 20 |
V | |
| VGSM | Gate-to-Source Voltage Single Pulse tp<10S |
30 |
V | |
| dv/dt | Peak Diode Recovery dv/dt |
5.0 |
V/ns | |
| TJ , TSTG | Junction and Storage Temperature Range |
-55 to + 150 |
°C | |
| Soldering Temperature, for 10 seconds |
240 (1.6mm from case) |
|||
IRF7509PBF
PDF/DataSheet Download
Fifth Generation HEXFETs IRF7509 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
The IRF7507TRPBF is one member of the IRF7507 family which is designed as the HEXFET power MOSFET that is available in the standard SOT-23 package to produce a HEXFET power MOSFET with the industry's smallest footprint. This package, dubbed the micro3, is id...
MOSFET N+P 20V 1.7A MICRO8
MOSFET N/P-CH DUAL 20V MICRO-8
Fifth Generation HEXFETs from International Rectifier of the IRF7507utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...
MOSFET P-CH DUAL 30V 1.7A MICRO8
Price: 1-1.1 USD
internal gate drivers, 20TSSOP, highly flexible, dual buck controller, 2.0kV, 4.6 to 13.2V
Price: 0.078-0.085 USD
500 kHz Current Mode, PWM Controller, high performance, SOP, 30 V, 30 mA
Price: 0.3-0.6 USD
ESD protection diode, High performance trench technology, Low profile TSSOP-8 package, 2.5V, MOSFET
Price: 0.078-0.09 USD
dual channel, low noise, low dropout,and fast response, LDO regulator, SOT23-6
Price: 10-12 USD
single-chip, voice record/playback, SOP28, 1mA, High-quality, 4.5 V, on-chip oscillator
Price: 1-1 USD
processor, QFP144, residential gateways, AudioCodes Ltd , AC483-C
Price: 0.1-1 USD
3-Axis Accelerometer, DFN, 0.4 μA
Price: 0.49-0.67 USD
CAP TANTALUM 47UF 25V 20% SMD - TAJD476M025RNJ
Price: 0.1-1 USD
transformer module, SOP, H1174NL
Price: 2-3.5 USD
3.3V, Dual-Speed Fast, Ethernet PHY Transceiver, LQFP-64
Price: 1.37-1.9 USD
capacitor, DIP, large capacitance ELXS451VSN471MA45S
Price: 0.1-0.3 USD
Operational Amplifier, SMD, Wide Bandwidth 4.5 MHz, High Slew Rate 13 V/μs
