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MFG:IR  Package Cooled:Micro 8  D/C:01+  

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Part Number: IRF7523D1

 

MFG: IR

Package Cooled: Micro 8

D/C: 01+

Description: The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solut...


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IRF7523D1 General Description


The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc.

The new Micro8TM package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

IRF7523D1 Maximum Ratings

  Parameter Max. Units
ID @ TA = 25 Continuous Drain Current, VGS @ 10V 2.7 A
ID @ TA = 70 2.1
IDM Pulsed Drain Current 21
PD @TA = 25 Power Dissipation 1.25 W
PD @TA = 70 0.8
  Linear Derating Factor 10 mW/
VGS Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt 6.2 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7523D1 Features

·Co-packaged HEXFET® Power MOSFET and Schottky Diode
·N-Channel HEXFET
·Low VF Schottky Rectifier
·Generation 5 Technology
·Micro8TM Footprint

IRF7523D1 Connection Diagram

IRF7523D1 Connection Diagram

IRF7523D1 datasheet

IRF7523D1
PDF/DataSheet Download

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