IRF7526D1

Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 1.25W
FET Feature: Diode (Isolated)
Input Capacitance (Ciss) @ Vds: 180pF @ 25V
Gate Charge (Qg) @ Vgs: 11nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 2A
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Manufacturer: International Rectifier
Supplier Device Package: Micro8?
Series: FETKY™
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.2A, 10V


Features:

·Co-packaged HEXFETÒ Power MOSFET and Schottky Diode
·P-Channel HEXFET
·Low VF Schottky Rectifier
·Generation 5 Technology
·Micro8TM Footprint




Pinout






Specifications

	Parameter	Max.	Units
ID @ TA = 25	Continuous Drain Current, VGS @ -4.5V	-2.0	A
ID @ TA = 70		-1.6
IDM	Pulsed Drain Current	-16
PD @TA = 25	Power Dissipation	1.25	W
PD @TA = 70		0.8
	Linear Derating Factor	10	mW/
VGS	Gate-to-Source Voltage	±20	V
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150

Description

The FETKYTM family of co-packaged HEXFETs and Schottky diodes IRF7526D1 offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc.

The new Micro8TM package IRF7526D1, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.




Parameters:

Technical/Catalog Information	IRF7526D1
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	200 mOhm @ 1.2A, 10V
Input Capacitance (Ciss) @ Vds	180pF @ 25V
Power - Max	1.25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	11nC @ 10V
Package / Case	Micro8?
FET Feature	Diode (Isolated)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF7526D1 IRF7526D1