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MFG:IRF  Package Cooled:06+  D/C:810  

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Part Number: IRF7526D1

 

MFG: IRF

Package Cooled: 06+

D/C: 810

Description: The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solut...


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IRF7526D1 General Description


The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc.

The new Micro8TM package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

IRF7526D1 Maximum Ratings

  Parameter Max. Units
ID @ TA = 25 Continuous Drain Current, VGS @ -4.5V -2.0 A
ID @ TA = 70 -1.6
IDM Pulsed Drain Current -16
PD @TA = 25 Power Dissipation 1.25 W
PD @TA = 70 0.8
  Linear Derating Factor 10 mW/
VGS Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7526D1 Features

·Co-packaged HEXFETÒ Power MOSFET and Schottky Diode
·P-Channel HEXFET
·Low VF Schottky Rectifier
·Generation 5 Technology
·Micro8TM Footprint

IRF7526D1 Connection Diagram

IRF7526D1 Connection Diagram

IRF7526D1 datasheet

IRF7526D1
PDF/DataSheet Download

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