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Part Number: IRF7530

 

 

 

 

Description: New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ...


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IRF7530 General Description


New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8 package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

IRF7530 Maximum Ratings

  Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TA = 25 Continuous Drain Current, VGS @ 4.5V 5.4 A
ID @ TA = 70 Continuous Drain Current, VGS @ 4.5V 4.3
IDM Pulsed Drain Current 40
PD @TA = 25 Power Dissipation 1.3 W
PD @TA = 70 Power Dissipation 0.80
  Linear Derating Factor 10 W/
EAS Single Pulse Avalanche Energy 33 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRF7530 Features

·Trench Technology
·Ultra Low On-Resistance
·Dual N-Channel MOSFET
·Very Small SOIC Package
·Low Profile (<1.1mm)
·Available in Tape & Reel

IRF7530 Connection Diagram

IRF7530 Connection Diagram

IRF7530 datasheet

IRF7530
PDF/DataSheet Download

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