IRF7555

Features:

·Trench Technology
·Ultra Low On-Resistance
·Dual P-Channel MOSFET
·Very Small SOIC Package
·Low Profile (<1.1mm)
·Available in Tape & Reel




Pinout






Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	-20	V
ID @ TA = 25	Continuous Drain Current, VGS @ -4.5V	-4.3	A
ID @ TA = 70	Continuous Drain Current, VGS @ -4.5V	-3.4
IDM	Pulsed Drain Current	-34
PD @TA = 25	Maximum Power Dissipation	1.25	W
PD @TA = 70	Maximum Power Dissipation	0.8	W
	Linear Derating Factor	10	W/
VGS	Gate-to-Source Voltage	±12	V
EAS	Single Pulse Avalanche Energy	36	mJ
dv/dt	Peak Diode Recovery dv/dt	1.1	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	240 (1.6mm from case)

Description

New trench HEXFETÒ power MOSFETs IRF7555 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8ä package IRF7555 has half the footprint area of the standard SO-8. This makes the Micro8 an ideal package for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.