FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.8W
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 5.7A
Gate Charge (Qg) @ Vgs: 22nC @ 4.5V
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Input Capacitance (Ciss) @ Vds: 650pF @ 15V
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Manufacturer: International Rectifier
Supplier Device Package: Micro8?
Rds On (Max) @ Id, Vgs: 35 mOhm @ 3.8A, 4.5V
Parameters: | Technical/Catalog Information | IRF7601TR |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 5.7A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 3.8A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 650pF @ 15V |
| Power - Max | 1.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 22nC @ 4.5V |
| Package / Case | Micro8? |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF7601TR
IRF7601TR
|
IRF7601TR Data Sheet
