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IRF7809A

HEX/MOS N-CH 30V 14.5A 8-SOIC

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SeekIC No. : 004376835 Detail

IRF7809A: HEX/MOS N-CH 30V 14.5A 8-SOIC

IRF7809A Data Sheet

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Part Number:
IRF7809A
Mfg:
International Rectifier
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current applications


Pinout

Connection Diagram


Specifications

Parameter Symbol IRF7809A IRF7809A Units
Drain-Source Voltage VDS 30 28 V
Gate-Source Voltage VGS ±12
Continuous Drain or Source
Current (VGS 4.5V)		 TA = 25 ID 14.5 11.4 A
TL = 90 14.2 11.2
Pulsed Drain Current IDM 100 100
Power Dissipation TA = 25 PD 2.5 W
TL = 90 2.4
Junction & Storage Temperature Range TJ, TSTG
55 to 150
A
Continuous Source Current (Body Diode) IS 2.5 2.5
Pulsed source Current ISM 50 50  



Description

These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

Both the IRF7809A and IRF7811A have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809A offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The IRF7811A offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications.

The package of the IRF7809A is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.




Parameters:

Technical/Catalog InformationIRF7809A
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C14.5A
Rds On (Max) @ Id, Vgs8.5 mOhm @ 15A, 4.5V
Input Capacitance (Ciss) @ Vds 7300pF @ 16V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs75nC @ 5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7809A
IRF7809A



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