IRF7811A

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3V @ 250µA
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 26nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Drain to Source Voltage (Vdss): 28V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 1760pF @ 15V
Rds On (Max) @ Id, Vgs: 10 mOhm @ 11A, 10V


Features:

• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current applications


Pinout




Specifications

Parameter		Symbol	IRF7809A	IRF7809A	Units
Drain-Source Voltage		VDS	30	28	V
Gate-Source Voltage		VGS	±12
Continuous Drain or Source Current (VGS 4.5V)	TA = 25	ID	14.5	11.4	A
	TL = 90		14.2	11.2
Pulsed Drain Current		IDM	100	100
Power Dissipation	TA = 25	PD	2.5		W
	TL = 90		2.4
Junction & Storage Temperature Range		TJ, TSTG	55 to 150		A
Continuous Source Current (Body Diode)		IS	2.5	2.5
Pulsed source Current		ISM	50	50

Description

These new devices employ advanced HEXFET® Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.

Both the IRF7809A and IRF7811A have been optimized and are 100% tested for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809A offers particulary low RDS(on) and high Cdv/dt immunity for synchronous FET applications. The IRF7811A offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications.

The package of the IRF7811A is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.