Features: • N-Channel Application-Specific MOSFETs• Ideal for CPU Core DC-DC Converters• Low Conduction Losses• Low Switching Losses• Minimizes Parallel MOSFETs for high current applications• 100% RG TestedPinoutSpecifications Parameter Symbol IRF7807 V ...
IRF7811AV: Features: • N-Channel Application-Specific MOSFETs• Ideal for CPU Core DC-DC Converters• Low Conduction Losses• Low Switching Losses• Minimizes Parallel MOSFETs for hig...
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| Parameter | Symbol | IRF7807 V | Units | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| Continuous Output Current (VGS 4.5V) | TA = 25 | ID | 10.8 | A |
| TL = 90 | 11.8 | |||
| Pulsed Drain Current | IDM | 100 | ||
| Power Dissipation | TA = 25 | PD | 2.5 | W |
| TL = 90 | 3.0 | |||
| Junction & Storage Temperature Range | TJ, TSTG | 55 to 150 |
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| Continuous Source Current (Body Diode) | IS | 2.5 | A | |
| Pulsed source Current | ISM | 50 | ||
This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors.
The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications.
The package of the IRF7811AV is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.