IRF7832Z

MOSFET N-CH 30V 21A 8-SOIC

product image

IRF7832Z Picture
SeekIC No. : 003431212 Detail

IRF7832Z: MOSFET N-CH 30V 21A 8-SOIC

floor Price/Ceiling Price

Part Number:
IRF7832Z
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/3/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 21A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.35V @ 250µA Gate Charge (Qg) @ Vgs: 45nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3860pF @ 15V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 21A
Packaging: Tube
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.35V @ 250µA
Input Capacitance (Ciss) @ Vds: 3860pF @ 15V


Parameters:

Technical/Catalog InformationIRF7832Z
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C21A
Rds On (Max) @ Id, Vgs3.8 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 3860pF @ 15V
Power - Max2.5W
PackagingTube
Gate Charge (Qg) @ Vgs45nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF7832Z
IRF7832Z



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Computers, Office - Components, Accessories
Programmers, Development Systems
Inductors, Coils, Chokes
Industrial Controls, Meters
Optical Inspection Equipment
View more