IRF820AS

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Input Capacitance (Ciss) @ Vds: 340pF @ 25V
Gate Charge (Qg) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power - Max: 50W
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 2.5A
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK


Features:

·Low Gate Charge Qg Results in Simple Drive Requirement
·Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and Current
·Effective COSS specified (See AN 1001)


Application

·Switch Mode Power Supply (SMPS)
·Uninterruptable Power Supply
·High speed power switching


Specifications

	Parameter	Max.	Units
ID @ TC = 2	Continuous Drain Current, VGS @ 10V	2.5	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	1.6
IDM	Pulsed Drain Current	10
PD @TC = 25	Power Dissipation	50	W
	Linear Derating Factor	0.4	W/
VGS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	3.4	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)