IRF830B

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Continuous Drain Current : 4.5 A


Features:

• 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	IRF830B	IRFS830	Units
VDSS	Drain-Source Voltage	500		V
ID	Drain Current - Continuous (TC = 25) - Continuous (TC = 100)	4.5	4.5*	A
		2.9	2.9*	A
IDM	Drain Current - Pulsed (Note 1)	18	18*	A
VGSS	Gate-Source Voltage	±30		V
EAS	Single Pulsed Avalanche Energy (Note 2)	270		mJ
IAR	Avalanche Current (Note 1)	4.5		A
EAR	Repetitive Avalanche Energy (Note 1)	7.3		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5		V/ns
PD	Power Dissipation (TC = 25) - Derate above 25	73	38	W
		0.58	0.3	W/
TJ, TSTG	Operating and Storage Temperature Range	-55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds	300

Description

These N-Channel enhancement mode power field effect transistors IRF830B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRF830B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.