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Part Number: IRF830B

 

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Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMO...


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IRF830B General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

IRF830B Maximum Ratings

Symbol Parameter IRF830B IRFS830 Units
VDSS Drain-Source Voltage 500 V
ID Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 4.5 4.5* A
2.9 2.9* A
IDM Drain Current - Pulsed (Note 1) 18 18* A
VGSS Gate-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ
IAR Avalanche Current (Note 1) 4.5 A
EAR Repetitive Avalanche Energy (Note 1) 7.3 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25)
- Derate above 25		 73 38
 W
0.58 0.3 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds		 300

IRF830B Features

• 4.5A, 500V, RDS(on) = 1.5Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

IRF830B datasheet

IRF830B
PDF/DataSheet Download

  • Datasheet: IRF830B
  • File Size: 910211 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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