Purchase IRF830, SiHF830, In-stock IRF830, SiHF830 From SeekIC.
- Table of contents:
IRF830, SiHF830
-
Suppliers
DataSheet
General Description
IRF830, SiHF830 General Description
Power MOSFET
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
- ·IRF1010EL
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
- 126916 KB
IRF830, SiHF830 Relative Products
IRF830
The Bay Linear MOSFET's ofthe IRF830provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.The IRF830 is offered in a 3-pin is universally preferred for all commercial-industr...
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IRF820S, SIHF820S
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IRF820B
These N-Channel enhancement mode power field effect transistors IRF820Bare produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching perfo...
IRF820ASPbF
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